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EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Features
12MHz -3dB bandwidth Unity gain buffer Supply voltage = 4.5V to 16.5V Low supply current (per buffer) = 500A * High slew rate = 10V/s * Rail-to-rail operation * * * *
General Description
The EL5221C is a dual, low power, high voltage rail-to-rail input-output buffer. Operating on supplies ranging from 5V to 15V, while consuming only 500A per channel, the EL5221C has a bandwidth of 12MHz (-3dB). The EL5221C also provides rail-to-rail input and output ability, giving the maximum dynamic range at any supply voltage. The EL5221C also features fast slewing and settling times, as well as a high output drive capability of 30mA (sink and source). These features make the EL5221C ideal for use as voltage reference buffers in Thin Film Transistor Liquid Crystal Displays (TFT-LCD). Other applications include battery power, portable devices, and anywhere low power consumption is important. The EL5221C is available in space-saving SOT23-6 and MSOP-8 packages and operates over a temperature range of -40C to +85C.
Applications
* * * * * * * * * * TFT-LCD drive circuits Electronics notebooks Electronics games Personal communication devices Personal Digital Assistants (PDA) Portable instrumentation Wireless LANs Office automation Active filters ADC/DAC buffer
Connection Diagrams Ordering Information
Part No. EL5221CW-T7 EL5221CW-T13 EL5221CY-T7 EL5221CY-T13 Package SOT23-6 SOT23-6 MSOP-8 MSOP-8 Tape & Reel 7" 13" 7" 13" Outline # MDP0038 MDP0038 MDP0043 MDP0043
VINA 1 VS- 2 VINB 3 SOT23-6
6 VOUTA 5 VS+ 4 VOUTB
VOUTA 1 NC 2 VINA 3 VS- 4 MSOP-8
8 VS+
November 7, 2000
7 VOUTB 6 NC 5 VINB
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a "controlled document". Current revisions, if any, to these specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
(c) 2000 Elantec Semiconductor, Inc.
EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Absolute Maximum Ratings (T
A
= 25C)
Values beyond absolute maximum ratings can cause the device to be prematurely damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied +18V Supply Voltage between VS+ and VSInput Voltage VS- - 0.5V, VS+ +0.5V Maximum Continuous Output Current 30mA
Maximum Die Temperature Storage Temperature Operating Temperature Power Dissipation ESD Voltage
+125C -65C to +150C -40C to +85C See Curves 2kV
Important Note: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Characteristics
VS+ = +5V, VS- = -5V, RL = 10k and CL = 10pF to 0V, TA = 25C unless otherwise specified. Parameter Input Characteristics VOS TCVOS IB RIN CIN AV VOL VOH ISC PSRR IS SR tS BW CS Input Offset Voltage Average Offset Voltage Drift Input Bias Current Input Impedance Input Capacitance Voltage Gain Output Swing Low Output Swing High Short Circuit Current Power Supply Rejection Ratio Supply Current (Per Buffer) Slew Rate [2] Settling to +0.1% -3dB Bandwidth Channel Separation -4.5V VOUT 4.5V IL = -5mA IL = 5mA Short to GND VS is moved from 2.25V to 7.75V No Load -4.0V VOUT 4.0V, 20% to 80% VO=2V Step RL = 10k, CL = 10pF f = 5MHz 7 60 4.85 0.995 -4.92 4.92 120 80 500 10 500 12 75 750 VCM = 0V
[1]
Description
Condition
Min
Typ 2 5 2 1 1.35
Max 12 50
Unit mV V/C nA G pF
VCM = 0V
1.005 -4.85
V/V V V mA dB A V/s ns MHz dB
Output Characteristics
Power Supply Performance
Dynamic Performance
1. Measured over the operating temperature range 2. Slew rate is measured on rising and falling edges
2
EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Electrical Characteristics
VS+ = +5V, VS- = 0V, RL = 10k and CL = 10pF to 2.5V, TA = 25C unless otherwise specified. Parameter Input Characteristics VOS TCVOS IB RIN CIN AV VOL VOH ISC PSRR IS SR tS BW CS Input Offset Voltage Average Offset Voltage Drift Input Bias Current Input Impedance Input Capacitance Voltage Gain Output Swing Low Output Swing High Short Circuit Current Power Supply Rejection Ratio Supply Current (Per Buffer) Slew Rate [2] Settling to +0.1% -3dB Bandwidth Channel Separation 0.5 VOUT 4.5V IL = -5mA IL = 5mA Short to GND VS is moved from 4.5V to 15.5V No Load 1V VOUT 4V, 20% to 80% VO = 2V Step RL = 10 k, CL = 10pF f = 5MHz 7 60 4.85 0.995 80 4.92 120 80 500 10 500 12 75 750 VCM = 2.5V
[1]
Description
Condition
Min
Typ 2 5 2 1 1.35
Max 10 50
Unit mV V/C nA G pF
VCM = 2.5V
1.005 150
V/V mV V mA dB A V/s ns MHz dB
Output Characteristics
Power Supply Performance
Dynamic Performance
1. Measured over the operating temperature range 2. Slew rate is measured on rising and falling edges
3
EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Electrical Characteristics
VS+ = +15V, VS- = 0V, RL = 10k and CL = 10pF to 7.5V, TA = 25C unless otherwise specified. Parameter Input Characteristics VOS TCVOS IB RIN CIN AV VOL VOH ISC PSRR IS SR tS BW CS Input Offset Voltage Average Offset Voltage Drift Input Bias Current Input Impedance Input Capacitance Voltage Gain Output Swing Low Output Swing High Short Circuit Current Power Supply Rejection Ratio Supply Current (Per Buffer) Slew Rate [2] Settling to +0.1% -3dB Bandwidth Channel Separation 0.5 VOUT 14.5V IL = -5mA IL = 5mA Short to GND VS is moved from 4.5V to 15.5V No Load 1V VOUT 14V, 20% to 80% VO = 2V Step RL = 10 k, CL = 10pF f = 5MHz 7 60 14.85 0.995 80 14.92 120 80 500 10 500 12 75 750 VCM = 7.5V
[1]
Description
Condition
Min
Typ 2 5 2 1 1.35
Max 14 50
Unit mV V/C nA G pF
VCM = 7.5V
1.005 150
V/V mV V mA dB A V/s ns MHz dB
Output Characteristics
Power Supply Performance
Dynamic Performance
1. Measured over the operating temperature range 2. Slew rate is measured on rising and falling edges
4
EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Typical Performance Curves
Input Offset Voltage Distribution 2000 VS=5V TA=25C 1600 Quantity (Buffers) Typical Production Distribution Quantity (Buffers) 35 30 25 1200 20 15 10 400 5 0 1 3 5 7 9 11 13 15 17 -12 -10 10 12 Input Offset Voltage (mV) Input Offset Voltage, TCVOS ( V/C) 19 150 150 -8 -6 -4 -2 0 2 4 6 8 VS=5V TA=25C Typical Production Distribution Input Offset Voltage Drift
800
0
Input Offset Voltage vs Temperature 10 4
Input Bias Current vs Temperature
Input Offset Voltage (mV)
5
0
Input Bias Current (nA)
VS=5V
2
VS=5V
0
-5
-2
-10 -50
0
50 Temperature (C)
100
150
-4 -50
0
50 Temperature (C)
100
Output High Voltage vs Temperature 4.97 -4.91 -4.92 Output High Voltage (V) Output Low Voltage (V) 4.96 VS=5V IOUT=5mA -4.93 -4.94 -4.95 -4.96 4.93 -50
Output Low Voltage vs Temperature
VS=5V IOUT=-5mA
4.95
4.94
0
50 Temperature (C)
100
150
-4.97 -50
0
50 Temperature (C)
100
5
EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Typical Performance Curves
Voltage Gain vs Temperature 1.001 13 12.5 1.0005 Voltage Gain (V/V) VS=5V Slew Rate (V/ S) 12 11.5 11 10.5 0.999 -50 10 -50 VS=5V Slew Rate vs Temperature
1.0000
0.9995
0
50 Temperature (C)
100
150
0
50 Temperature (C)
100
150
Supply Current per Channel vs Temperature 0.55 650
Supply Current per Channel vs Supply Voltage
VS=5V Supply Current (mA) 0.5 Supply Current ( A)
550
TA=25C
450
0.45
350
0.4 -50
0
50 Temperature (C)
100
150
250 0 5 10 Supply Voltage (V) 15 20
Frequency Response for Various RL 5 10k Magnitude (Normalized) (dB) 0 1k CL=10pF VS=5V 560 150 Magnitude (Normalized) (dB) 20
Frequency Response for Various CL
10
RL=10k VS=5V 12pF
0 50pF -10 100pF
-5
-10
-20 1000pF
-15 100k
1M Frequency (Hz)
10M
100M
-30 100k
1M Frequency (Hz)
10M
100M
6
EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Typical Performance Curves
Output Impedance vs Frequency 200 VS=5V TA=25C 12 10 8 6 4 2 0 10k VS=5V TA=25C RL=10k CL=12pF Distortion <1% Maximum Output Swing vs Frequency
120
80
40
0 10k
100k Frequency (Hz)
1M
Maximum Output Swing (VP-P)
160 Output Impedance ()
10M
100k Frequency (Hz)
1M
10M
PSRR vs Frequency 80 PSRR+ PSRRVoltage Noise (nVHz) 100 600
Input Voltage Noise Spectral Density vs Frequency
60 PSRR (dB)
40
10
20
VS=5V TA=25C
0 100
1k
10k 100k Frequency (Hz)
1M
10M
1 100
1k
10k
1M 100k Frequency (Hz)
10M
100M
Total Harmonic Distortion + Noise vs Frequency 0.010 0.009 0.008 THD+ N (%) 0.007 0.006 0.005 0.004 0.003 0.002 0.001 1k 10k Frequency (Hz) 100k VS=5V RL=10k VIN=1VRMS X-Talk (dB) -100 -80 -60
Channel Separation vs Frequency Response Dual measured Channel A to B Quad measured Channel A to D or B to C Other combinations yield improved rejection. VS=5V RL=10k VIN=220mVRMS
-120
-140 1k
10k
100k Frequency (Hz)
1M
6M
7
EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Typical Performance Curves
Small-Signal Overshoot vs Load Capacitance 100 VS=5V RL=10k VIN=50mV TA=25C 5 4 3 2 Step Size (V) 1 0 -1 -2 20 -3 -4 0 10 100 Load Capacitance (pF) 1000 -5 0 200 400 Settling Time (nS) 600 800 0.1% VS=5V RL=10k CL=12pF TA=25C Settling Time vs Step Size
80 Overshoot (%)
0.1%
60
40
Large Signal Transient Response
Small Signal Transient Response 50mV 200ns
1V
1 S
VS=5V TA=25C RL=10k CL=12pF
VS=5V TA=25C RL=10k CL=12pF
8
EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Pin Descriptions
SOT23-6 1 MSOP-8 3 Pin Name VINA Function Buffer A Input
VS+
Equivalent Circuit
VSCircuit 1
2 3 4
4 5 7
VS VINB VOUTB
Negative Supply Voltage Buffer B Input Buffer B Output
VS+
(Reference Circuit 1)
VSGND Circuit 2
5 6
8 1
VS + VOUTA
Positive Supply Voltage Buffer A Output (Reference Circuit 2)
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EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Applications Information
Product Description
The EL5221C unity gain buffer is fabricated using a high voltage CMOS process. It exhibits rail-to-rail input and output capability and has low power consumption (500A per buffer). These features make the EL5221C ideal for a wide range of general-purpose applications. When driving a load of 10k and 12pF, the EL5221C has a -3dB bandwidth of 12MHz and exhibits 10V/S slew rate.
Short Circuit Current Limit
The EL5221C will limit the short circuit current to 120mA if the output is directly shorted to the positive or the negative supply. If an output is shorted indefinitely, the power dissipation could easily increase such that the device may be damaged. Maximum reliability is maintained if the output continuous current never exceeds 30mA. This limit is set by the design of the internal metal interconnects.
Operating Voltage, Input, and Output
The EL5221C is specified with a single nominal supply voltage from 5V to 15V or a split supply with its total range from 5V to 15V. Correct operation is guaranteed for a supply range of 4.5V to 16.5V. Most EL5221C specifications are stable over both the full supply range and operating temperatures of -40C to +85C. Parameter variations with operating voltage and/or temperature are shown in the typical performance curves. The output swings of the EL5221C typically extend to within 80mV of positive and negative supply rails with load currents of 5mA. Decreasing load currents will extend the output voltage range even closer to the supply rails. Figure 1 shows the input and output waveforms for the device. Operation is from 5V supply with a 10k load connected to GND. The input is a 10VP-P sinusoid. The output voltage is approximately 9.985VP-P.
5V 10 S
Output Phase Reversal
The EL5221C is immune to phase reversal as long as the input voltage is limited from VS- -0.5V to VS+ +0.5V. Figure 2 shows a photo of the output of the device with the input voltage driven beyond the supply rails. Although the device's output will not change phase, the input's overvoltage should be avoided. If an input voltage exceeds supply voltage by more than 0.6V, electrostatic protection diodes placed in the input stage of the device begin to conduct and overvoltage damage could occur.
1V 10 S
VS=2.5V TA=25C VIN=6VP-P
1V VS=5V TA=25C VIN=10VP-P Input
Figure 2. Operation with Beyond-the-Rails Input Power Dissipation
With the high-output drive capability of the EL5221C buffer, it is possible to exceed the 125C 'absolute-maximum junction temperature' under certain load current conditions. Therefore, it is important to calculate the maximum junction temperature for the application to
5V
Figure 1. Operation with Rail-to-Rail Input and Output
Output
10
EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
determine if load conditions need to be modified for the buffer to remain in the safe operating area. The maximum power dissipation allowed in a package is determined according to:
T JM AX - T A MA X P D MAX = ------------------------------------------- JA
the device's power derating curves. To ensure proper operation, it is important to observe the recommended derating curves shown in Figure 3 and Figure 4.
Package Mounted on a JEDEC JESD51-7 High Effective Thermal Conductivity Test Board 1 870mW 0.8 Power Dissipation (W) MAX TJ=125C
where: TJMAX = Maximum Junction Temperature TAMAX= Maximum Ambient Temperature JA = Thermal Resistance of the Package PDMAX = Maximum Power Dissipation in the Package The maximum power dissipation actually produced by an IC is the total quiescent supply current times the total power supply voltage, plus the power in the IC due to the loads, or:
P D MAX = i [ V S x I SMA X + ( V S + - V OU T i ) x I L OA D i ]
0.6 435mW 0.4
MS OP -8
11 5 C/ W
0.2
SO T23 -6 2 30 C/W
0 0 25 50 75 85 100 Ambient Temperature (C) 125 150
Figure 3. Package Power Dissipation vs Ambient Temperature
when sourcing, and
P D MA X = i [ V S x I SM AX + ( V OU T i - V S - ) x I L OA D i ]
0.6 0.5 Power Dissipation (W)
Package Mounted on a JEDEC JESD51-3 Low Effective Thermal Conductivity Test Board 486mW 391mW
MS OP -8 2
MAX TJ=125C
when sinking. where: i = 1 to 2 for Dual Buffer VS = Total Supply Voltage ISMAX = Maximum Supply Current Per Channel VOUTi = Maximum Output Voltage of the Application ILOADi = Load Current If we set the two PDMAX equations equal to each other, we can solve for RLOADi to avoid device overheat. Figure 3 and Figure 4 provide a convenient way to see if the device will overheat. The maximum safe power dissipation can be found graphically, based on the package type and the ambient temperature. By using the previous equation, it is a simple matter to see if PDMAX exceeds
0.4 0.3 0.2 0.1 0 0
SO T2 3-6 25 6 C
06
C
/W
/W
25
50
75 85
100
125
150
Ambient Temperature (C)
Figure 4. Package Power Dissipation vs Ambient Temperature Unused Buffers
It is recommended that any unused buffer have the input tied to the ground plane.
11
EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Driving Capacitive Loads
The EL5221C can drive a wide range of capacitive loads. As load capacitance increases, however, the -3dB bandwidth of the device will decrease and the peaking increase. The buffers drive 10pF loads in parallel with 10k with just 1.5dB of peaking, and 100pF with 6.4dB of peaking. If less peaking is desired in these applications, a small series resistor (usually between 5 and 50) can be placed in series with the output. However, this will obviously reduce the gain slightly. Another method of reducing peaking is to add a "snubber" circuit at the output. A snubber is a shunt load consisting of a resistor in series with a capacitor. Values of 150 and 10nF are typical. The advantage of a snubber is that it does not draw any DC load current or reduce the gain
Power Supply Bypassing and Printed Circuit Board Layout
The EL5221C can provide gain at high frequency. As with any high frequency device, good printed circuit board layout is necessary for optimum performance. Ground plane construction is highly recommended, lead lengths should be as short as possible, and the power supply pins must be well bypassed to reduce the risk of oscillation. For normal single supply operation, where the VS - pin is connected to ground, a 0.1F ceramic capacitor should be placed from VS+ to pin to VS- pin. A 4.7F tantalum capacitor should then be connected in parallel, placed in the region of the buffer. One 4.7F capacitor may be used for multiple devices. This same capacitor combination should be placed at each supply pin to ground if split supplies are to be used.
12
EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
General Disclaimer
Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement.
WARNING - Life Support Policy
November 7, 2000
Elantec Semiconductor, Inc.
675 Trade Zone Blvd. Milpitas, CA 95035 Telephone: (408) 945-1323 (888) ELANTEC Fax: (408) 945-9305 European Office: +44-118-977-6080 Japan Technical Center: +81-45-682-5820
13
Elantec, Inc. products are not authorized for and should not be used within Life Support Systems without the specific written consent of Elantec, Inc. Life Support systems are equipment intended to support or sustain life and whose failure to perform when properly used in accordance with instructions provided can be reasonably expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. Products in Life Support Systems are requested to contact Elantec, Inc. factory headquarters to establish suitable terms & conditions for these applications. Elantec, Inc.'s warranty is limited to replacement of defective components and does not cover injury to persons or property or other consequential damages.
Printed in U.S.A.

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